technical data sheet 6 lake street, lawrence, ma 01841 gort road business park, ennis, co. clare, ireland 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: http: //www.microsemi.com pnp silicon low power transistor qualified per mil-prf-19500/354 t4-lds-0092 rev. 2 (101320) page 1 of 4 devices levels 2n2604 2N2604UB jan 2n2605 2n2605ub jantx jantxv absolute maximum ratings (t c = +25c unless otherwise noted) parameters / test conditions symbol 2n2604 2n2605 unit collector-base voltage v cbo 80 70 vdc collector-emitter voltage v ceo 60 vdc emitter-base voltage v ebo 6.0 vdc collector current i c 30 madc total power dissipation @ t a = +25c (1) p t 400 mw/c operating & storage junction temperature range t j , t stg -65 to +200 c thermal char acteristics parameters / test conditio ns symbol max. unit thermal resistance, junction-to-ambient r ja 437 c/mw ub 275 note: 1/ consult 19500/354 for thermal curves electrical characteristics (t a = +25c, unless otherwise noted) parameters / test conditions symbol min. max. unit off charactertics collector-base cutoff current i cbo v cb = 80v dc v cb = 70v dc v cb = 50v dc v cb = 50v dc, t a = +150c 2n2604, ub 2n2605, ub 2n2604, 2n2605, ub 2n2604, 2n2605, ub 10.0 10.0 10.0 5.0 uadc nadc uadc uadc collector-emitter breakdown current i c = 10madc v (br)ceo 60 vdc emitter-base cutoff current v eb = 6.0vdc v eb = 5.0vdc i ebo 10.0 2.0 uadc adc collector-emitter cutoff current v ce = 50vdc i ces 10 adc to-46 (to-206ab) ub package
technical data sheet 6 lake street, lawrence, ma 01841 gort road business park, ennis, co. clare, ireland 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: http: //www.microsemi.com t4-lds-0092 rev. 2 (101320) page 2 of 4 electrical characteristics (t a = +25c, unless otherwise noted) (cont.) parameters / test conditions symbol min. max. unit on charactertics (2) forward-current transfer ratio h fe i c = 10 dynamic characteristics parameters / test conditions symbol min. max. unit small-signal short-circuit input impedance h ie k i c = 1.0madc, v cb = 5.0vdc, f = 1.0khz 2n2604, ub 2n2605, ub 1.0 2.0 10 20 small-signal open-circuit forward current output admittance h oe mhos i c = 1.0madc, v ce = 5.0vdc, f = 1.0khz 2n2604, ub 2n2605, ub 40 60 small-signal short-circuit forw ard current transfer ratio h fe i c = 1.0madc, v ce = 5.0vdc, f = 1.0khz 2n2604, ub 2n2605, ub 60 150 180 450 magnitude of small-signal forw ard current transfer ratio |h fe | i c = 0.5madc, v ce = 5.0vdc, f = 30mhz 1.0 8.0 output capacitance c obo pf v cb = 5.0vdc, i e = 0, 100 khz f 1.0mhz 6.0 noise figure db v ce = 5.0vdc, i c = 10 , f = 100hz v ce = 5.0vdc, i c = 10 adc, r g = 10k , f = 1.0khz v ce = 5.0vdc, i c = 10 adc, r g = 10k , f = 10khz f 1 f 2 f 3 5.0 3.0 3.0 (2) pulse test: pulse width = 300 s, duty cycle 2.0%
technical data sheet 6 lake street, lawrence, ma 01841 gort road business park, ennis, co. clare, ireland 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: http: //www.microsemi.com t4-lds-0092 rev. 2 (101320) page 3 of 4 package dimensions notes: 1. dimensions are in inches. lead 1 is emitter, lead 2 is base, and lead 3 is collector. 2. millimeters are given for general information only. 3. symbol tl is measured from hd maximum. 4. details of outline in this zone are optional. 5. leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within .007 inch (0.18 mm) radius of true position (tp) at maximum material condition (mmc) relative to tab at mmc. the device may be measured by direct methods or by the gauge and gauging procedure. 6. symbol lu applies between l1 and l2. dimension ld applies between l2 and ll minimum. 7. lead number three is electrically connected to case. 8. beyond r maximum, tw shall be held for a minimum length of .011 inch (0.28 mm). 9. symbol r applied to both inside corners of tab. 10. in accordance with asme y14. 5m, diameters are equivalent to x symbology. figure 1. physical dimensions - (to-46). symbol dimensions inches millimeters note min max min max cd .178 .195 4.52 4.95 ch .065 .085 1.65 2.16 hd .209 .230 5.31 5.84 lc .100 tp 2.54 tp 5 ld .016 .021 0.41 0.53 6 ll .500 1.750 12.70 44.45 6 lu .016 .019 0.41 0.48 6 l 1 .050 1.27 6 l 2 .250 6.35 6 q .040 1.02 4 tl .028 .048 0.71 1.22 3, 8 tw .036 .046 0.91 1.17 3, 8 r .010 0.25 9 45 tp 45 tp 5
technical data sheet 6 lake street, lawrence, ma 01841 gort road business park, ennis, co. clare, ireland 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: http: //www.microsemi.com t4-lds-0092 rev. 2 (101320) page 4 of 4 package dimensions dimensions dimensions symbol inches millimeters notes symbol inches millimeters notes min max min max min max min max bh .046 .056 1.17 1.42 ls 1 .035 .039 0.89 0.99 bl .115 .128 2.92 3.25 ls 2 .071 .079 1.80 2.01 bw .085 .108 2.16 2.74 lw .016 .024 0.41 0.61 cl .128 3.25 r .008 0.20 cw .108 2.74 r 1 .012 0.31 ll 1 .022 .038 0.56 0.97 r 2 .022 0.56 ll 2 .017 .035 0.43 0.89 notes: 1. dimensions are in inches. 2. millimeters are given for general information only. 3. hatched areas on package denote metallized areas 4. pad 1 = base, pad 2 = emitter, pad 3 = collector, pad 4 = shielding connected to the lid. 5. in accordance with asme y14. 5m, diameters are equivalent to x symbology. figure 2. physical dimensions, surface mount (ub version).
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